Resonant activation in bistable semiconductor lasers

Abstract

We theoretically investigate the possibility of observing resonant activation in the hopping dynamics of two-mode semiconductor lasers. We present a series of simulations of a rate-equations model under random and periodic modulation of the bias current. In both cases, for an optimal choice of the modulation time-scale, the hopping times between the stable lasing modes attain a minimum. The simulation data are understood by means of an effective one-dimensional Langevin equation with multiplicative fluctuations. Our conclusions apply to both Edge Emitting and Vertical Cavity Lasers, thus opening the way to several experimental tests in such optical systems.