CdZnTe:Cl crystals for X-ray computer tomography detectors
Abstract
Processes of growth of semi-insulating Cd(1-x)Zn(x)Te:Cl crystals (x = 0.0002 and 0.1) of n-type conductivity are investigated. From the grown crystals detectors for X-ray computer tomography with small value of photocurrent memory (afterglow) (0.1-0.3%) are obtained.
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