Unified Approach to the Large-Signal and High-Frequency Theory of $p-n$-Junctions

Abstract

Spectral approach to the charge carrier transport in $p-n$-junctions has allowed us to revise the theoretical results relating to large signal operation of the junction to make them valid for both the low and high frequencies ranges. The spectral composition of the external circuit current includes both the DC and AC components. The former produces the static current--voltage characteristic with the modified Bessel function of zeroth order, $I_0(\beta V_\sim)$, while the latter yields the dynamic admittance with the modified Bessel function of first order, $I_1(\beta V_\sim)$, either of them depend on the signal amplitude. Our experimental results are consistent with the theoretical ones if a fitting parameter allowing for recombination processes in the depletion layer is taken into account.