Chemical doping-induced gap opening and spin polarization in graphene
Abstract
By using first principles calculations we report a chemical doping induced gap in graphene. The structural and electronic properties of CrO3 interacting with graphene layer are calculated using ab initio methods based on the density functional theory. The CrO3 acts as an electron acceptor modifying the original electronic and magnetic properties of the graphene surface through a chemical adsorption. The changes induced in the electronic properties are strongly dependent of the CrO3 adsorption site and for some sites it is possible to open a gap in the electronic band structure. Spin polarization effects are also predicted for some adsorption configurations.
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