Rashba effect in the graphene/Ni(111) system

Abstract

Here, we report on angle-resolved photoemission studies of the electronic $\pi$ states of high-quality epitaxial graphene layer on a Ni(111) surface. In this system electron binding energy of the $\pi$ states shows a strong dependence on the magnetization reversal of the Ni film. The observed extraordinary large energy shift up to 225 meV of the graphene-derived $\pi$-band peak position for opposite magnetization directions is attributed to a manifestation of the Rashba interaction of spin-polarized electrons in the $\pi$ band with the large effective electric field at graphene/Ni interface. Our findings show that an electron spin in the graphene layer can be manipulated in a controlled way and have important implications for graphene-based spintronic devices.