Measurement of Coulomb drag between Anderson insulators

Abstract

We report observations of the Coulomb drag effect between two effectively 2-d insulating a-Si_{1-x}Nb_{x} films. We find that there only exist a limited range of experimental parameters over which we can measure a sizable linear-response transresistivity (\rho_{d}). The temperature dependence of \rho_{d} is consistent with the layers being Efros-Shklovskii Anderson insulators provided that a 3-d density of states and a localization length smaller than that obtained from the DC layer-conductivity are assumed.