Synthesizing and characterization of hole doped nickel based layer superconductor (La1-xSrx)ONiAs
Abstract
We report the synthesizing and characterization of the hole doped Ni-based superconductor (La1-xSrx)ONiAs. By substituting La with Sr, the superconducting transition temperature Tc is increased from 2.75 K of the parent phase LaONiAs to 3.7 K at the doping levels x= 0.1 - 0.2. The curve Tc versus hole concentration shows a symmetric behavior as the electron doped samples La(O1-xFx)NiAs. The normal state resistivity in Ni-based samples shows a good metallic behavior and reveals the absence of an anomaly which appears in the Fe-based system at about 150 K, suggesting that this anomaly is not a common feature for all systems. Hall effect measurements indicate that the electron conduction in the parent phase LaONiAs is dominated by electron-like charge carriers, while with more Sr doping, a hole-like band will emerge and finally prevail over the conduction, and accordingly the superconducting transition temperature Tc increases.