Giant Carrier Mobility in Single Crystals of FeSb2
Abstract
We report the giant carrier mobility in single crystals of FeSb2. Nonlinear field dependence of Hall resistivity is well described with the two-carrier model. Maximum mobility values in high mobility band reach ~105 cm2/Vs at 8 K, and are ~102 cm2/Vs at the room temperature. Our results point to a class of materials with promising potential for applications in solid state electronics.
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