Magnetic reversal under external field and current-driven domain wall motion in (Ga,Mn)As: influence of extrinsic pinning
Abstract
We investigate the anisotropy of magnetic reversal and current-driven domain wall motion in annealed Ga0.95Mn0.05As thin films and Hall bar devices with perpendicular magnetic anisotropy. Hall bars with current direction along the [110] and [1-10] crystallographic axes are studied. The [110] device shows larger coercive field than the [1-10] device. Strong anisotropy is observed during magnetic reversal between [110] and [1-10] directions. A power law dependence is found for both devices between the critical current (JC) and the magnetization (M), with JC is proportional to M2.6. The domain wall motion is strongly influenced by the presence of local pinning centres.
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