Investigations of thermometric characteristics of p+-n - type GaP diodes

Abstract

The technique of obtaining of p+-n-type gallium phosphide diode epitaxial structures from liquid phase was developed as well as pilot samples of diode temperature sensors were fabricated based on them. Thermometric and current-voltage characteristics of the test diodes were measured in the temperature range of 80 / 520K and their basic technical characteristics were determined. An availability of application of the structures developed as sensing elements of high-temperature heat sensors was shown.