Quasi-reversible Magnetoresistance in Exchange Spring Tunnel Junctions
Abstract
We report a large, quasi-reversible tunnel magnetoresistance in exchange-biased ferromagnetic semiconductor tunnel junctions wherein a soft ferromagnetic semiconductor () is exchange coupled to a hard ferromagnetic metal (MnAs). Our observations are consistent with the formation of a region of inhomogeneous magnetization (an "exchange spring") within the biased layer. The distinctive tunneling anisotropic magnetoresistance of produces a pronounced sensitivity of the magnetoresistance to the state of the exchange spring.
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