Itinerant Ferromagnetism in the electronic localization limit

Abstract

We present Hall effect, $R_{xy}(H)$, and magnetoresistance, $R_{xx}(H)$, measurements of ultrathin films of Ni, Co and Fe with thicknesses varying between 0.2-8 nm and resistances between 1 M$\Omega$ - 100 $\Omega.$ Both measurements show that films having resistance above a critical value, $R_{C}$, (thickness below a critical value, $d_{C}$) show no signs for ferromagnetism. Ferromagnetism appears only for films with $R<R_{C}$, where $R_{C}$ is material dependent. We raise the possibility that the reason for the absence of spontaneous magnetization is suppression of itinerant ferromagnetism by electronic disorder in the strong localization regime.