High-Mobility Few-Layer Graphene Field Effect Transistors Fabricated on Epitaxial Ferroelectric Gate Oxides (Supplementary Information)
Abstract
Supplementary Information to arXiv:0810.4466: 1. Characterizations of Pb(Zr0.2Ti0.8)O3 (PZT) films. 2. Substrate preparation before the exfoliation of graphene. 3. The band structure of FLG. 4. Dielectric constant measurements of PZT. 5. rho(Vg) and RH(Vg) fitting inside the band overlap regime. 6. The deformation potential of longitudinal acoustic (LA) phonons in graphene. 7. Resistivity and Hall measurements of a SiO2-gated FLG.
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