Spin susceptibility and polarization field in a dilute two-dimensional electron system in (111) silicon
Abstract
We find that the polarization field, Bchi, obtained by scaling the weak-parallel-field magnetoresistance at different electron densities in a dilute two-dimensional electron system in (111) silicon, corresponds to the spin susceptibility that grows strongly at low densities. The polarization field, Bsat, determined by resistance saturation, turns out to deviate to lower values than Bchi with increasing electron density, which can be explained by filling of the upper electron subbands in the fully spin-polarized regime.
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