Temperature dependence of the dielectric permittivity of CaF2, BaF2 and Al2O3: application to the prediction of a temperature dependent van der Waals surface interaction exerted onto a neighbouring Cs (8P3/2) atom
Abstract
The temperature behaviour in the range 22 C to 500 C of the dielectric permittivity in the infrared range is investigated for CaF2, BaF2 and Al2O3 through reflectivity measurements. The dielectric permittivity is retrieved by fitting reflectivity spectra with a model taking into account multiphonon contributions. The results extrapolated from the measurements are applied to predict a temperature-dependent atom-surface van der Waals interaction. We specifically consider as the atom of interest Cs (8P3/2), the most relevant virtual couplings of which, fall in the range of thermal radiation and are located in the vicinity of the reststrahlen band of fluoride materials.
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