Observation of persistent photoconductivity in bulk Gallium Arsenide and Gallium Phosphide samples at cryogenic temperatures using the Whispering Gallery mode method
Abstract
Whispering Gallery modes in bulk cylindrical Gallium Arsenide and Gallium Phosphide samples have been examined both in darkness and under white light at cryogenics temperatures < 50 K. In both cases persistent photoconductivity was observed after initially exposing semiconductors to white light from a halogen lamp. Photoconductance decay time constants for GaP and GaAs were determined to be 0.900 +/- 0.081 ns and 1.098 +/- 0.063 ns, respectively, using this method.
0
Turn this paper into a lesson
ArcXiv compiles a structured reading guide from this paper's metadata: plain-English importance, contributions, prerequisite concepts, which sections to read first, flashcards, and a quiz. Grounded in the abstract, never invented.