Oscillatory crossover from two dimensional to three dimensional topological insulators

Abstract

We investigate the crossover regime from three dimensional topological insulators Bi2Te3 and Bi2Se3 to two dimensional topological insulators with quantum spin Hall effect when the layer thickness is reduced. Using both analytical models and first-principles calculations, we find that the crossover occurs in an oscillatory fashion as a function of the layer thickness, alternating between topologically trivial and non-trivial two dimensional behavior.

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