Aging and memory in a two-dimensional electron system in Si
Abstract
The relaxations of conductivity after a temporary change of carrier density ns during the waiting time tw have been studied in a strongly disordered two-dimensional electron system in Si. At low enough ns < ng (ng - the glass transition density), the nonexponential relaxations exhibit aging and memory effects at low temperatures T. The aging properties change abruptly at the critical density for the metal-insulator transition nc < ng. The observed complex dynamics of the electronic transport is strikingly similar to that of other systems that are far from equilibrium.
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