Evidence of fractional matching states in nanoperforated Nb thin film grown on porous silicon
Abstract
Resistive transitions have been measured on a perforated Nb thin film with a lattice of holes with the period of the order of ten nanometers. Bumps in the dR/dH versus H curves have been observed at the first matching field and its fractional values, 1/4, 1/9 and 1/16. This effect has been related to different vortex lattice configurations made available by the underlying lattice of holes.
0
Turn this paper into a lesson
ArcXiv compiles a structured reading guide from this paper's metadata: plain-English importance, contributions, prerequisite concepts, which sections to read first, flashcards, and a quiz. Grounded in the abstract, never invented.