A Novel Route for the Inclusion of Metal Dopants in Silicon

Abstract

We report a new method to introduce metal atoms into silicon wafers, using negligible thermal budget. Molecular thin films are irradiated with ultra-violet (UV) light releasing metal species into the semiconductor substrate. Secondary ion mass spectrometry (SIMS) and X-ray absorption spectroscopy (XAS) show that Mn is incorporated into Si as an interstitial dopant. We propose that our method can form the basis of a generic low-cost, low-temperature technology that could lead to the creation of ordered dopant arrays.