Limits on electron quality in suspended graphene due to flexural phonons
Abstract
The temperature dependence of the mobility in suspended graphene samples is investigated. In clean samples, flexural phonons become the leading scattering mechanism at temperature T 10\,\,K, and the resistivity increases quadratically with T. Flexural phonons limit the intrinsic mobility down to a few m2/Vs at room T. Their effect can be eliminated by applying strain or placing graphene on a substrate.
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