Theoretical investigation of the four-layered self-doped high-Tc superconductors: evidence of pair tunneling effect

Abstract

Based on a four-layered self-doped t-J type model and the slave-boson mean-field approach, we study theoretically the superconductivity in the electron-doped and hole-doped layers. The neighbor layers are coupled through both the single electron interlayer hopping and pair tunneling effect. The superconducting gap magnitude for the electron-doped band is nearly twice of that of the hole-doped one, which contrasts to our previous understanding of the electron-hole asymmetry in high-Tc superconductors but consistent with recent angle-resolved-photoemission-spectroscopy experiments in four-layered materials Ba2Ca3Cu4O8F2. Our results propose that the pair tunneling effect is important to examine the multi-layered superconducting materials.

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