A study of electronic structure of FeSe$_{1-x}$Te$_{x}$ chalcogenides by Fe and Se K-edge x-ray absorption near edge structure measurements

Abstract

Fe K-edge and Se K-edge x-ray absorption near edge structure (XANES) measurements are used to study FeSe$_{1-x}$Te$_{x}$ electronic structure of chalcogenides. An intense Fe K-edge pre-edge peak due to Fe 1s$\to$3d (and admixed Se/Te $p$ states) is observed, showing substantial change with the Te substitution and X-ray polarization. The main white line peak in the Se K-edge XANES due to Se 1s $\to$ 4p transition appear similar to the one expected for Se$^{2-}$ systems and changes with the Te substitution. Polarization dependence reveals that unoccupied Se orbitals near the Fermi level have predominant $p_{x,y}$ character. The results provide key information on the hybridization of Fe $3d$ and chalcogen $p$ states in the Fe-based chalcogenide superconductors.