Hysteresis loops of the magnetoconductance in graphene devices

Abstract

We report very low temperature magnetoconductance DeltaG measurements on graphene devices with the magnetic field H applied parallel to the carbon sheet. The DeltaG(H) signal depends on the gate voltage Vg and its sign is related with the universal conductance fluctuations. When the magnetic field is swept at fast rates, DeltaG displays hysteresis loops evident for different sizes and at different transport regimes of the devices. We attribute this to the magnetization reversal of paramagnetic centres in graphene layer, which might originate from defects in our devices.