Electric--field effect on electron-doped infinite-layer Sr0.88La0.12CuO2+x thin films

Abstract

We have used the electric--field effect to modulate the resistivity of the surface of underdoped Sr0.88La0.12CuO2+x thin films, allowing opposite modifications of the electron and hole density in the CuO2 planes, an original situation with respect to conventional chemical doping in electron-doped materials. When the Hall effect indicates a large contribution of a hole band, the electric--field effect on the normal state resistivity is however dominated by the electrons, and the superconducting transition temperature increases when carriers are transfered from holes to electrons.

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