Robust surface electronic properties of topological insulators: Bi2Te3 films grown by molecular beam epitaxy

Abstract

The surface electronic properties of the important topological insulator Bi2Te3 are shown to be robust under an extended surface preparation procedure which includes exposure to atmosphere and subsequent cleaning and recrystallization by an optimized in-situ sputter-anneal procedure under ultra high vacuum conditions. Clear Dirac-cone features are displayed in high-resolution angle-resolved photoemission spectra from the resulting samples, indicating remarkable insensitivity of the topological surface state to cleaning-induced surface roughness.