Metallic Behavior of Cyclotron Relaxation Time in Two-Dimensional Systems
Abstract
Cyclotron resonance of two-dimensional electrons is studied at low temperatures down to 0.4 K for a high-mobility Si/SiGe quantum well which exhibits a metallic temperature dependence of dc resistivity . The relaxation time τ CR shows a negative temperature dependence, which is similar to that of the transport scattering time τt obtained from . The ratio τ CR/τt at 0.4 K increases as the electron density Ns decreases, and exceeds unity when Ns approaches the critical density for the metal-insulator transition.
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