Magnetic order of Mn-doped ZnO: A Monte Carlo simulation of Carriers Concentration's effect

Abstract

Recently, diluted Magnetic Semiconductors (DMS) doped with a small concentration of magnetic impurities, especially DMS doped with transition metal, inducing ferromagnetic DMSs have attracted a great interest. Using the Monte Carlo method within the Ising model,we study the magnetic properties of doped Mn ions in semi-conductor for different carrier's concentration. For the case of Zn1-xMnxO, the results of our calculations show the effect of carriers in understanding the existence and the control of the magnetic order. We give also the exact values of carriers' concentration that should be adopted or avoided in order to get ferromagnetic phase with high Curie temperature.