Raman signature of electron-electron correlation in chemically doped few-layer graphene
Abstract
We report an experimental Raman study of few-layer graphene after chemical doping achieved by a plasma process in CHF3 gas. A systematic reduction of both the splitting and the area of the 2D band is observed with increasing the doping level. Both effects can be ascribed to the electron-electron correlation, which on the one hand reduces the electron-phonon coupling strength, and on the other hand affects the probability of the double resonant Raman process.
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