Excitons in Graphene and the Influence of the Dielectric Environment

Abstract

The exciton Wannier equation for graphene is solved for different background dielectric constants. It is shown that freestanding graphene features strong Coulomb effects with a very large exciton binding energy exceeding $3\,$eV. A second-order transition to a weak Coulomb regime is found if the effective background dielectric constant exceeds a critical value. All bound-state solutions vanish for epitaxial graphene on a substrate with large background permittivity, such as SiC.