Large conductance modulation of gold thin films by huge charge injection via electrochemical gating

Abstract

By using an electrochemical gating technique with a new combination of polymer and electrolyte, we were able to inject surface charge densities n2D as high as 3.5 × 1015 e/cm2 in gold films and to observe large relative variations in the film resistance, DeltaR/R', up to 10% at low temperature. DeltaR/R' is a linear function of n2D - as expected within a free-electron model - if the film is thick enough (> 25 nm), otherwise a tendency to saturation due to size effects is observed. The application of this technique to 2D materials will allow extending the field-effect experiments to a range of charge doping where giant conductance modulations and, in some cases, even the occurrence of superconductivity are expected.

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