An intrinsic mobility ceiling of Si bulk
Abstract
We compute by Density Functional Theory-Non Equilibrium Green Functions Formalism (DFT-NEGFF) the conductance of bulk Si along different crystallographic directions. We find a ceiling value for the intrinsic mobility of bulk silicon of 8.4·106 cm2/V· s. We suggest that this result is related to the lowest effective mass of the <001> direction.
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