Anomalous Hall effect in the Co-based Heusler compounds Co$_{2}$FeSi and Co$_{2}$FeAl

Abstract

The anomalous Hall effect (AHE) in the Heusler compounds Co$_{2}$FeSi and Co$_{2}$FeAl is studied in dependence of the annealing temperature to achieve a general comprehension of its origin. We have demonstrated that the crystal quality affected by annealing processes is a significant control parameter to tune the electrical resistivity $\rho_{xx}$ as well as the anomalous Hall resistivity $\rho_{ahe}$. Analyzing the scaling behavior of $\rho_{ahe}$ in terms of $\rho_{xx}$ points to a temperature-dependent skew scattering as the dominant mechanism in both Heusler compounds.