Determining the Drift Time of Charge Carriers in P-Type Point-Contact HPGe Detectors

Abstract

An algorithm to measure the drift time of charge carriers in p-type point contact (PPC) high-purity germanium (HPGe) detectors from the signals processed with a charge-sensitive preamplifier is introduced. It is demonstrated that the drift times can be used to estimate the distance of charge depositions from the point contact and to characterize losses due to charge trapping. A correction for charge trapping effects over a wide range of energies is implemented using the measured drift times and is shown to improve the energy resolution by up to 30%.