A study of thermally-induced optical bistability and the role of surface treatments in Si-based mid-infrared photonic crystal cavities

Abstract

We report the observation of optical bistability in Si-based photonic crystal cavities operating around 4.5 \mum. Time domain measurements indicate that the source of this optical bistability is thermal, with a time constant on the order of 5 \mus. Quality (Q) factor improvement is shown by the use of surface treatments (wet processes and annealing), resulting in an increase of Q-factor from 11,500 to 29,300 at 4.48 \mum. After annealing in a N2 environment, optical bistability is no longer seen in our cavities.