Circuit Modeling of Tunneling Real-Space Transfer Transistors: Toward Terahertz Frequency Operation

Abstract

High frequency operation of tunneling real-space transfer transistor (TRSTT) in the negative differential resistance (NDR) regime is assessed by calculating the device common source unity current gain frequency (fT) range with a small signal equivalent circuit model including tunneling. Our circuit model is based on an In0.2Ga0.8As and delta-doped GaAs dual channel structure with various gate lengths. The calculated TRSTT fT agrees very well with experimental data, limiting factor being the resistance of the delta-doped GaAs layer. By optimizing the gate dimensions and channel materials, we find fT in the NDR region approaches terahertz range, which anticipates potential use of TRSTT as terahertz sources.