Mott-Hubbard localization in model of electronic subsystem of doped fullerides
Abstract
Microscopical model of a doped fulleride electronic subsystem taking into account the triple orbital degeneracy of energy states is considered within the configurational-operator approach. Using the Green function method the energy spectrum of the model at integer band filling n=1 is calculated, which case corresponds to AC60 compounds. Possible correlation-driven metal-insulator transition in the model is discussed.
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