Unifying explanation for carrier relaxation anomaly in gapped systems
Abstract
We develop a theory to describe energy relaxation of photo-excited carriers in low-temperature ordered states with band gap opening and formulate carrier relaxation time τ near and below transition temperature Tc by quantifying contributions from different carrier-phonon scatterings to the relaxation rate. The theory explains anomalous experimental observations of τ in gapped systems. Transverse acoustic (TA) phonon modes play a crucial role in carrier relaxation; their heat capacity determines τ-divergence near Tc. The theory is validated by fitting τ of fullerene polymers onto a theoretical curve.
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