Long spin relaxation times in wafer scale epitaxial graphene on SiC(0001)
Abstract
We developed an easy, upscalable process to prepare lateral spin-valve devices on epitaxially grown monolayer graphene on SiC(0001) and perform nonlocal spin transport measurements. We observe the longest spin relaxation times tauS in monolayer graphene, while the spin diffusion coefficient DS is strongly reduced compared to typical results on exfoliated graphene. The increase of tauS is probably related to the changed substrate, while the cause for the small value of DS remains an open question.
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