Sign-reversal of the in-plane resistivity anisotropy in hole-doped iron pnictides

Abstract

The in-plane anisotropy of the electrical resistivity across the coupled orthorhombic and magnetic transitions of the iron pnictides has been extensively studied in the parent and electron-doped compounds. All these studies universally show that the resistivity a across the long orthorhombic axis aO - along which the spins couple antiferromagnetically below the magnetic transition temperature - is smaller than the resistivity b of the short orthorhombic axis bO, i. e. a<b. Here we report that in the hole-doped compounds Ba1-xKxFe2As2, as the doping level increases, the resistivity anisotropy initially becomes vanishingly small, and eventually changes sign for sufficiently large doping, i. e. b<a. This observation is in agreement with a recent theoretical prediction that considers the anisotropic scattering of electrons by spin-fluctuations in the orthorhombic/nematic state.

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