Non-volatile gated variable resistor based on doped La2CuO4 and SrTiO3 heterostructures
Abstract
Gated variable resistors were manufactured by depositing epitaxial heterostructures of doped La2CuO4 and SrTiO3 layers. Their conductance change as function of write current I and write time t followed a simple empirical law of the form G/G = CIA tB. This behavior is in agreement with ionic transport that accelerates exponentially with electrical field strength.
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