Electron transport in a ferromagnetic/normal/ferromagnetic tunnel junction based on the surface of a topological insulator

Abstract

We theoretically study the electron transport properties in a ferromagnetic/normal/ferromagnetic tunnel junction, which is deposited on the top of a topological surface. The conductance at the parallel (\textbf{P}) configuration can be much bigger than that at the antiparallel (\textbf{AP}) configuration. Compared \textbf{P} with \textbf{AP} configuration, there exists a shift of phase which can be tuned by gate voltage. We find that the exchange field weakly affects the conductance of carriers for \textbf{P} configuration but can dramatically suppress the conductance of carriers for \textbf{AP} configuration. This controllable electron transport implies anomalous magnetoresistance in this topological spin valve, which may contribute to the development of spintronics . In addition, we find that there is a Fabry-Perot-like electron interference.