Coexistence of two- and three-dimensional Shubnikov-de Haas oscillations in Ar+ -irradiated KTaO3
Abstract
We report the electron doping in the surface vicinity of KTaO3 by inducing oxygen-vacancies via Ar+ -irradiation. The doped electrons have high mobility (> 104 cm2/Vs) at low temperatures, and exhibit Shubnikov-de Haas oscillations with both two- and three-dimensional components. A disparity of the extracted in-plane effective mass, compared to the bulk values, suggests mixing of the orbital characters. Our observations demonstrate that Ar+ -irradiation serves as a flexible tool to study low dimensional quantum transport in 5d semiconducting oxides.
Turn this paper into a lesson
ArcXiv compiles a structured reading guide from this paper's metadata: plain-English importance, contributions, prerequisite concepts, which sections to read first, flashcards, and a quiz. Grounded in the abstract, never invented.