Spin-polarized tunneling current through a thin film of topological insulator in a parallel magnetic field
Abstract
We calculate the tunneling conductance σ between the surface states on the opposite sides of the ultra-thin film of a topological insulator in a parallel magnetic field By. The parallel magnetic produces a relative shift of the in-plane momenta of the two surfaces states. An overlap between the shifted Fermi circles and their spin structure define an unusual dependence of the tunneling conductance σ(By) on the magnetic field. Because the spin of the electronic surface states in topological insulators is locked with momentum, the spin-polarization of the tunneling current can be controlled by magnetic field By.
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