Colossal Magnetoresistance in the Mn2+ Oxypnictides NdMnAsO1-xFx

Abstract

Colossal magnetoresistance (CMR) is a rare phenomenon in which the electronic resistivity of a material can be decreased by orders of magnitude upon application of a magnetic field. Such an effect could be the basis of the next generation of magnetic memory devices. Here we report CMR in the antiferromagnetic oxypnictide NdMnAsO1-xFx as a result of competition between an antiferromagnetic insulating phase with strong electron correlations and a paramagnetic semiconductor upon application of a magnetic field. The discovery of CMR in antiferromagnetic Mn2+ oxypnictide materials could open up an array of materials for further investigation and optimisation for technological applications.