Electron Transfer on Impurity doped Graphene Nanoribbon

Abstract

Electronic transport properties in armchair shaped edges graphene nanoribbons (AGNRs) doped various impurities have been simulated by the non-equilibrium Green's function approach combined with the first principle calculation based on the density functional theory. We have observed that impurity levels appear in electronic struc-tures, and that the quantization of transmission function is moderated for doped AGNRs. The I-V characteristic can be computed from the transmission function. Our simulation results show that AGNRs doped impurities have higher conductance than the non-doped one.