Electro-mechanically induced GHz rate optical frequency modulation in silicon

Abstract

We present a monolithic silicon acousto-optic frequency modulator (AOFM) operating at 1.09GHz. Direct spectroscopy of the modulated laser power shows asymmetric sidebands which indicate coincident amplitude modulation and frequency modulation. Employing mechanical levers to enhance displacement of the optical resonator resulted in greater than 67X improvement in the opto-mechanical frequency modulation factor over earlier reported numbers for silicon nanobeams.

0

Turn this paper into a lesson

ArcXiv compiles a structured reading guide from this paper's metadata: plain-English importance, contributions, prerequisite concepts, which sections to read first, flashcards, and a quiz. Grounded in the abstract, never invented.

Discussion (0)

Sign in to join the discussion.

Loading comments…