Negative differential resistances with back gate-controlled lowest operation windows in graphene double barrier resonant tunneling diodes

Abstract

We theoretically investigate negative differential resistance (NDR) of massless and massive Dirac Fermions in double barrier resonant tunneling diodes based on sufficiently short and wide graphene strips. The current-voltage characteristics calculated in a rotated pseudospin space show that, the NDR feature only presents with appropriate structural parameters for the massless case and the peak-to-valley current ratio can be enhanced exponentially by a tunable band gap. Remarkably, the lowest NDR operation window is nearly structure-free and can be almost solely controlled by a back gate, which may have potential applications in NDR devices with the operation window as a crucial parameter.