High-order sideband generation in bulk GaAs
Abstract
When an intense THz field at frequency fTHz is applied to excitons resonantly created in bulk GaAs by a near IR laser at frequency fNIR, sidebands are observed at frequencies fsideband = fNIR + 2nfTHz, where n is an integer. At temperature T=10 K, sidebands of order -4 greater than or equal to 2n greater than or equal to 16 are observed. Sidebands up to 10th order persist at 170 K.
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