Theory of Defect-Induced Kondo Effect in Graphene: Effect of Zeeman Field
Abstract
The effect of the Zeeman field on the defect-induced Kondo effect in graphene is investigated. The effective model of the Kondo effect is derived, and is analyzed on the basis of the numerical renormalization group method. It is found that, under the Zeeman field, at the border of the spin polarized state and the Kondo-Yosida singlet state, there is an unusual fixed point where the entropy of the defect is kB ln2 and the expectation value of S2z is 1/8.
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